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  ds30429 rev. 3 - 2 1 of 4 www.diodes.com dcx (lo-r1) h ? diodes incorporated dcx (lo-r1) h dcx (lo-r1) h complementary npn/pnp pre-biased small signal dual surface mount transistor features ? epitaxial planar die construction ? built-in biasing resistors ? lead free by design/rohs compliant (note 3) ? "green" device (note 4 and 5) mechanical data ? case: sot-563 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminals: finish - matte tin annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.005 grams (approximate) p/n r1 (nom) r2 (nom) marking dcx122lh dcx142jh dcx122th dcx142th 0.22k 0.47k 0.22k 0.47k 10k 10k open open c81 c82 c83 c84 n e p duc p duc w ro t t ro sot-563 dim min max typ a 0.15 0.30 0.25 b 1.10 1.25 1.20 c 1.55 1.70 1.60 d 0.50 g 0.90 1.10 1.00 h 1.50 1.70 1.60 k 0.56 0.60 0.60 l 0.15 0.25 0.20 m 0.10 0.18 0.11 all dimensions in mm a m l maximum ratings npn s ection @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc 50 v input voltage dcx122lh dcx142jh v in -5 to +6 -5 to +6 v input voltage dcx122th dcx142th v ebo (max) 5 v output current all i c 100 ma power dissipation (note 1, 2) p d 150 mw thermal resistance, junction to ambient air (note 1) r ja 833 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 1. mounted on fr4 pc board with recommended pad layout at http://www.di odes.com/datasheets/ap02001.pdf. 2. npn section, pnp section, or maximum combined. 3. no purposefully added lead. 4. diodes inc.'s "green" policy can be found on our w ebsite at http://www.diodes.com /products/lead_free/index.php. 5. product manufactured with date code uo (week 40, 2007) an d newer are built with green molding compound. product manufactur ed prior to date code uo are built with non-green molding compound and may contain halogens or sb2o3 fire retardants. r 1 , r 2 r 1 only schematic diagram, top view r 1 r 1 r 1 r 1 r 2 r 2 b c h k g d cxxym
ds30429 rev. 3 - 2 2 of 4 www.diodes.com dcx (lo-r1) h ? diodes incorporated new product maximum ratings pnp section @t a = 25c unless otherwise specified characteristic symbol value unit supply voltage v cc -50 v input voltage dcx122lh dcx142jh v in +5 to -6 +5 to -6 v input voltage dcx122th dcx142th v ebo (max) -5 v output current all i c -100 ma power dissipation (note 1, 2) p d 150 mw thermal resistance, junction to ambient air (note 1) r ja 833 c/w operating and storage temperature range t j , t stg -55 to +150 c electrical characteris tics npn section @t a = 25c unless otherwise specified r1, r2 types characteristic symbol min typ max unit test condition dcx122lh dcx142jh v l(off) 0.3 0.3 ? ? v v cc = 5v, i o = 100 a input voltage dcx122lh dcx142jh v l(on) ? ? 2.0 2.0 v v o = 0.3v, i o = 20ma v o = 0.3v, i o = 20ma output voltage v o(on) ? ? 0.3v v i o /i l = 5ma/0.25ma input current dcx122lh dcx142jh i l ? ? 28 13 ma v i = 5v output current i o(off) ? ? 0.5 a v cc = 50v, v i = 0v dc current gain ddcx122lh ddcx142jh g l 56 56 ? ? ? v o = 5v, i o = 10ma gain-bandwidth product* f t ? 200 ? mhz v ce = 10v, i e = 5ma, f = 100mhz * transistor - for reference only electrical characteris tics npn section @t a = 25c unless otherwise specified r1-only characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 50 ? ? v i c = 50 a collector-emitter breakdown voltage bv ceo 40 ? ? v i c = 1ma emitter-base breakdown voltage dcx122th dcx142th bv ebo 5 ? ? v i e = 50 a i e = 50 a collector cutoff current i cbo ? ? 0.5 a v cb = 50v emitter cutoff current dcx122th dcx142th i ebo ? ? ? 0.5 0.5 a v eb = 4v collector-emitter saturation voltage v ce(sat) ? ? 0.3 v i c = 5ma, i b = 0.25ma dc current transfer ratio dcx122th dcx142th h fe 100 100 250 250 600 600 ? i c = 1ma, v ce = 5v gain-bandwidth product* f t ? 200 ? mhz v ce = 10v, i e = -5ma, f = 100mhz * transistor - for reference only
ds30429 rev. 3 - 2 3 of 4 www.diodes.com dcx (lo-r1) h ? diodes incorporated electrical characteris tics pnp section @t a = 25c unless otherwise specified r1, r2 types new product characteristic symbol min typ max unit test condition dcx122lh dcx142jh v l(off) -0.3 -0.3 ? ? v v cc = -5v, i o = -100 a input voltage dcx122lh dcx142jh v l(on) ? ? -2.0 -2.0 v v o = -0.3v, i o = -20ma v o = -0.3v, i o = -20ma output voltage v o(on) ? ? -0.3v v i o /i l = -5ma/-0.25ma input current dcx122lh dcx142jh i l ? ? -28 -13 ma v i = -5v output current i o(off) ? ? -0.5 a v cc = -50v, v i = 0v dc current gain dcx122lh dcx142jh g l 56 56 ? ? ? v o = -5v, i o = -10ma gain-bandwidth product* f t ? 200 ? mhz v ce = -10v, i e = -5ma, f = 100mhz * transistor - for reference only electrical characteristics @t a = 25c unless otherwise specified r1-only types characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo -50 ? ? v i c = -50 a collector-emitter breakdown voltage bv ceo -40 ? ? v i c = -1ma emitter-base breakdown voltage dcx122th dcx142th bv ebo -5 ? ? v i e = -50 a i e = -50 a collector cutoff current i cbo ? ? -0.5 a v cb = -50v emitter cutoff current dcx122th dcx142th i ebo ? ? ? -0.5 -0.5 a v eb = -4v collector-emitter saturation voltage v ce(sat) ? ? -0.3 v i c = -5ma, i b = -0.25ma dc current transfer ratio dcx122th dcx142th h fe 100 100 250 250 600 600 ? i c = -1ma, v ce = -5v gain-bandwidth product* f t ? 200 ? mhz v ce = -10v, i e = 5ma, f = 100mhz * transistor - for reference only -50 050100 250 200 150 50 100 0 t , ambient temperature ( c) fig. 1 derating curve - total a 150 p , p o we r dissi p a t i o n (mw) d
ds30429 rev. 3 - 2 4 of 4 www.diodes.com dcx (lo-r1) h ? diodes incorporated ordering information (note 6) new product device packaging shipping dcx122lh-7 sot-563 3000/tape & reel dcx142jh-7 sot-563 3000/tape & reel DCX122TH-7 sot-563 3000/tape & reel dcx142th-7 sot-563 3000/tape & reel notes: 6. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information cxxym cxx = product type marking code (see page 1) ym = date code marking y = year ex: t = 2006 m = month ex: 9 = september date code key year 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 code n p r s t u v w x y z month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d important notice diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to any product herein. diodes incorporat ed does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its paten t rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes inco rporated and all the companies whose products ar e represented on our website, harmless against all damages. life support diodes incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the president of diodes incorporated.


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